august 2006 rev 1 1/7 7 STTH120L04TV1 ultrafast high voltage rectifier mian product characteristics features and benefits ultrafast switching low reverse current low thermal resistance reduces switching and conduction losses package insulation voltage: 2500 v rms description the STTH120L04TV1 uses st 400 v technology and is specially suited fo r use in switching power supplies, welding equipment, and industrial applications, as an output rectification diode. order codes i f(av) 2 x 60 a v rrm 400 v t j (max) 150 c v f (typ) 0.83 v t rr (max) 50 ns part number marking STTH120L04TV1 STTH120L04TV1 a1 k1 a2 k2 k1 k2 a2 a1 isotop STTH120L04TV1 table 1. absolute ratings (limiting values, per diode) symbol parameter value unit v rrm repetitive peak reverse voltage 400 v i f(rms) rms forward current 120 a i f(av) average forward current t c = 115 c = 0.5 per diode 60 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 600 a t stg storage temperature range -55 to + 150 c t j maximum operating junction temperature 150 c www.st.com
characteristics STTH120L04TV1 2/7 1 characteristics when diodes 1 and 2 are used simultaneously: ? tj(diode 1) = p(diode 1) x r th(j-c) (per diode) + p(diode 2) x r th(c) to evaluate the conduction losses use the following equation: p = 0.8 x i f(av) + 0.0033 i f 2 (rms) table 2. thermal resistance symbol parameter value (max). unit r th(j-c) junction to case per diode 0.74 c/w to t a l 0 . 4 2 r th(c) coupling 0.1 table 3. static electrical characteristics (per diode) symbol parameter test conditions min. typ max. unit i r (1) 1. pulse test: t p = 5 ms, < 2% reverse leakage current t j = 25 c v r = v rrm 50 a t j = 125 c 50 500 v f (2) 2. pulse test: t p = 380 s, < 2% forward voltage drop t j = 25 c i f = 60 a 1.2 v t j = 150 c 0.83 1.0 table 4. dynamic characteristics (per diode) symbol parameter test co nditions min typ max unit t rr reverse recovery time t j = 25 c i f = 1 a di f /dt = 50 a/s v r = 30 v 66 90 ns i f = 1 a di f /dt = 200 a/s v r = 30 v 36 50 i rm reverse recovery current t j = 125 c i f = 60 a v r = 200 v di f /dt = 100 a/s 15 a s factor softness factor t j = 125 c i f = 60 a v r = 200 v di f /dt = 100 a/s 0.4 t fr forward recovery time t j = 25 c i f = 60 a di f /dt = 200 a/s v fr = 1.1 x v fmax 600 ns v fp forward recovery voltage t j = 25 c i f = 60 a di f /dt = 200 a/s v fr = 1.1 x v fmax 2.6 v
STTH120L04TV1 characteristics 3/7 figure 1. conduction losses versus average forward current (per diode) figure 2. forward voltage drop versus forward current (per diode) 0 10 20 30 40 50 60 70 80 0 1020304050607080 p(w) =0.05 =0.1 =0.2 =0.5 =1 t i f(av) (a) 0 20 40 60 80 100 120 140 160 180 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t j =150c (maximum values) t j =150c (maximum values) t j =150c (typical values) t j =150c (typical values) t j =25c (maximum values) t j =25c (maximum values) i fm (a) v fm (v) figure 3. relative variation of thermal impedance junction to case versus pulse duration figure 4. peak reverse recovery current versus di f /dt (typical values, per diode) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 z th(j-c) /r th(j-c) single pulse t p (s) 0 5 10 15 20 25 30 35 40 45 0 50 100 150 200 250 300 350 400 450 500 i rm (a) i f =i f(av) v r =200v t j =125c di f /dt(a/s) figure 5. reverse recovery time versus di f /dt (typical values, per diode) figure 6. reverse recovery charges versus di f /dt (typical values, per diode) 0 25 50 75 100 125 150 175 200 225 250 0 50 100 150 200 250 300 350 400 450 500 t (ns) i f =i f(av) v r =200v t j =125c di f /dt(a/s) rr 0 500 1000 1500 2000 2500 3000 0 100 200 300 400 500 q (nc) i f =i f(av) v r =200v t j =125c di f /dt(a/s) rr
characteristics STTH120L04TV1 4/7 figure 7. reverse recovery softness factor versus di f /dt (typical values, per diode) figure 8. relative variations of dynamic parameters versus junction temperature 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 50 100 150 200 250 300 350 400 450 500 s factor i f < 2 x i f(av) v r =200v t j =125c di f /dt(a/s) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25 50 75 100 125 i rm & t rr s factor i f =i f(av) v r =200v reference: t j =125c q rr t j (c) figure 9. transient peak forward voltage versus di f /dt (typical values, per diode) figure 10. forward recovery time versus di f /dt (typical values, per diode) figure 11. junction capacitance versus reverse voltage applied (typical values, per diode) 0 1 2 3 4 5 6 7 8 0 50 100 150 200 250 300 350 400 450 500 v fp (v) i f =i f(av) t j =125c di f /dt(a/s) 0 100 200 300 400 500 600 700 800 900 1000 0 50 100 150 200 250 300 350 400 450 500 t (ns) i f =i f(av) v fr =1.1 x v f max. t j =125c di f /dt(a/s) fr 100 1000 1 10 100 1000 c(pf) f=1mhz v osc =30mv rms t j =25c v r (v)
STTH120L04TV1 package information 5/7 2 package information epoxy meets ul94, v0 cooling method: by conduction (c) in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com. table 5. isotop dimensions ref. dimensions millimeters inches min. max. min. max. a 11.80 12.20 0.465 0.480 a1 8.90 9.10 0.350 0.358 b 7.8 8.20 0.307 0.323 c 0.75 0.85 0.030 0.033 c2 1.95 2.05 0.077 0.081 d 37.80 38.20 1.488 1.504 d1 31.50 31.70 1.240 1.248 e 25.15 25.50 0.990 1.004 e1 23.85 24.15 0.939 0.951 e2 24.80 typ. 0.976 typ. g 14.90 15.10 0.587 0.594 g1 12.60 12.80 0.496 0.504 g2 3.50 4.30 0.138 0.169 f 4.10 4.30 0.161 0.169 f1 4.60 5.00 0.181 0.197 p 4.00 4.30 0.157 0.69 p1 4.00 4.40 0.157 0.173 s 30.10 30.30 1.185 1.193 f1 f d1 g d s b e1 g1 ?p p1 e e2 g2 c c2 a1 a
ordering information STTH120L04TV1 6/7 3 ordering information 4 revision history ordering type marking package weight base qty delivery mode STTH120L04TV1 STTH120L04TV1 isotop 27 g (without screws) 10 (with screws) tu b e date revision description of changes 11-aug-2006 1 first issue
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